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Datasheet No - PD97382 March 6, 2009
IR1168S
DUAL SMART RECTIFIER DRIVER IC Features
* * * * * * * * * * * * * Secondary-side high speed controller for synchronous rectification in resonant half bridge topologies 200V proprietary IC technology Max 500KHz switching frequency Anti-bounce logic and UVLO protection 4A peak turn off drive current Micropower start-up & ultra low quiescent current 10.7V gate drive clamp 70ns turn-off propagation delay Wide Vcc operating range Direct sensing for both Synchronous Rectifiers Minimal component count Simple design Lead-free
Product Summary
Topology VD VOUT Io+ & I o- (typical) Turn on Propagation Delay Turn off Propagation Delay LLC Half-bridge 200V 10.7V Clamped +1A & -4A 60ns (typical) 70ns (typical)
Package Options
Typical Applications
* LCD & PDP TV, Telecom SMPS, AC-DC adapters
8-Lead SOIC
Typical Connection Diagram
Vin
SR1
C1
Cdc M1
Lr 1 2 1 2 3 4 GATE1 VCC VS1 VD1 GATE2 GND VS2 VD2 8 7 6 5
Rg1
C2
M2
IR1168 IR1168
Cout Rg2
LOAD
Rtn
SR2
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IR1168S
Table of Contents
Description Qualification Information Absolute Maximum Ratings Electrical Characteristics Functional Block Diagram Input/Output Pin Equivalent Circuit Diagram Lead Definitions Lead Assignments Application Information and Additional Details Package Details Tape and Reel Details Part Marking Information Ordering Information
Page
3 4 5 6 8 9 10 10 12 16 17 18 19
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IR1168S
Description
IR1168 is dual smart secondary-side rectifier driver IC designed to drive two N-Channel power MOSFETs used as synchronous rectifiers in resonant converter applications. The IC can control one or more paralleled N MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source for each rectifier MOSFET voltage is sensed differentially to determine the level of the current and the power switch is turned ON and OFF in close proximity of the zero current transition. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression that allows reliable operation in fixed and variable frequency applications.
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IR1168S
Qualification Information
Qualification Level Industrial Comments: This family of ICs has passed JEDEC's Industrial qualification. IR's Consumer qualification level is granted by extension of the higher Industrial level. MSL2 260C SOIC8N (per IPC/JEDEC J-STD-020) Class B (per JEDEC standard JESD22-A115) Class 2 (per EIA/JEDEC standard EIA/JESD22-A114) Class I, Level A (per JESD78) Yes
Moisture Sensitivity Level Machine Model ESD Human Body Model IC Latch-Up Test RoHS Compliant
Qualification standards can be found at International Rectifier's web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information.
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IR1168S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Parameters Supply Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage Gate Voltage Operating Junction Temperature Storage Temperature Thermal Resistance Package Power Dissipation Switching Frequency Symbol VCC VD VD VS VGATE TJ TS RJA PD fsw Min. -0.3 -3 -5 -3 -0.3 -40 -55 Max. 20 200 200 20 20 150 150 128 970 500 Units V V V V V C C C/W mW kHz Remarks
VCC=20V, Gate off
SOIC-8 SOIC-8, TAMB=25C
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IR1168S
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range TJ from - 25 C to 125C. Typical values represent the median values, which are related to 25C. If not otherwise stated, a supply voltage of VCC = 15 V is assumed for test condition. Supply Section Parameters Supply Voltage Operating Range VCC Turn On Threshold VCC Turn Off Threshold (Under Voltage Lock Out) VCC Turn On/Off Hysteresis Operating Current Quiescent Current Start-up Current Comparator Section Parameters Turn-off Threshold Turn-on Threshold Hysteresis Input Bias Current Input Bias Current Comparator Input Offset One-Shot Section Parameters Blanking pulse duration Reset Threshold Hysteresis Minimum On Time Section Parameters Minimum on time
Symbol VCC VCC ON VCC UVLO VCC HYST ICC IQCC ICC START
Min. 8.6 7.5 7
Typ.
Max. 18 8.5 8
Units V V V V mA mA mA A GBD
Remarks
8.1 7.6 0.5 14 48 2.6
18 60 3.8 140
CLOAD =1nF, fSW = 400kHz CLOAD =4.7nF, fSW = 400kHz VCC=VCC ON - 0.1V
Symbol VTH1 VTH2 VHYST IIBIAS1 IIBIAS2 VOFFSET
Min. -12 -220
Typ. -6 -140 141 1 10
Max. 0 -80 10 50 2
Units mV mV mV A VD = -50mV A VD = 200V mV GBD
Remarks
Symbol tBLANK VTH3 VHYST3
Min. 9
Typ. 17 2.5 5.4 40
Max. 25
Units Remarks s V VCC=10V - GBD V VCC=20V - GBD mV VCC=10V - GBD
Symbol TONmin
Min. 500
Typ. 750
Max. 1000
Units ns
Remarks
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IR1168S
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range TJ from - 25 C to 125C. Typical values represent the median values, which are related to 25C. If not otherwise stated, a supply voltage of VCC = 15 V is assumed for test condition. Gate Driver Section Parameters Gate Low Voltage Gate High Voltage Rise Time
Symbol VGLO VGTH tr1 tr2 Fall Time tf1 tf2 Turn on Propagation Delay tDon Turn off Propagation Delay tDoff Pull up Resistance rup Pull down Resistance rdown Output Peak Current (source) IO source Output Peak Current (sink) IO sink
Min. 8.5
Typ. 0.3 10.7 10 80 5 25 60 70 5 1.2 1 4
Max. 0.5 13.5
120 120
Units V V ns ns ns ns ns ns A A
Remarks IGATE = 200mA VCC=12V-18V (internally clamped) CLOAD = 1nF CLOAD = 4.7nF CLOAD = 1nF CLOAD = 4.7nF VDS to VGATE -100mV overdrive VDS to VGATE -100mV overdrive IGATE = 15mA - GBD IGATE = -200mA CLOAD = 1nF - GBD CLOAD = 1nF - GBD
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IR1168S
Functional Block Diagram
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IR1168S
I/O Pin Equivalent Circuit Diagram
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IR1168S
Lead Definitions
PIN# 1 2 3 4 5 6 7 8 Symbol GATE1 VCC VS1 VD1 VD2 VS2 GND GATE2 Description Gate Drive Output 1 Supply Voltage Sync FET 1 Source Voltage Sense Sync FET 1 Drain Voltage Sense Sync FET 2 Drain Voltage Sense Sync FET 2 Source Voltage Sense Analog and Power Ground Gate Drive Output 2
Lead Assignments
1 2 3 4
GATE1 VCC VS1 VD1
GATE2 GND VS2 VD2
8 7 6 5
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IR1168S
Detailed Pin Description
VCC: Power Supply This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC. To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as close as possible to the IR1168. This pin is not internally clamped. GND: Ground This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to this point. VD1 and VD2: Drain Voltage Sense These are the two high-voltage pins used to sense the drain voltage of the two SR power MOSFETs. Routing between the drain of the MOSFET and the IC pin must be particularly optimized. VS1 and VS2: Source Voltage Sense These are the two differential sense pins for the two source pins of the two SR power MOSFETs. This pin must not be connected directly to the GND pin (pin 7) but must be used to create a kelvin contact as close as possible to the power MOSFET source pin. GATE1 and GATE2: Gate Drive Outputs These are the two gate drive outputs of the IC. The gate voltage is internally clamped and has a +1A/-4A peak drive capability. Although this pin can be directly connected to the synchronous rectifier (SR) MOSFET gate, the use of gate resistor is recommended (specifically when putting multiple MOSFETs in parallel). Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance.
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IR1168S
Application Information and Additional Details
State Diagram
POWER ON
Gate Inactive
UVLO MODE
VCC < VCCon Gate Inactive ICC = ICC START
VCC > VCCon
VCC < VCCuvlo
NORMAL
Gate Active Gate PW MOT
UVLO Mode: The IC is in the UVLO mode when the VCC pin voltage is below VCCUVLO. The UVLO mode is accessible fro any other state of operation. In the UVLO state, most of the internal circuitry is unbiased and the IC draws quiescent current of ICCSTART. The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the VCC turn on thresh voltage, VCC ON. Normal Mode: The IC enters in normal operating mode once the UVLO voltage has been exceeded. At this point the gate drive are operating and the IC will draw a maximum of ICC from the supply voltage source.
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IR1168S
General Description
The IR1168 Dual Smart Rectifier controller IC is the industry first dedicated high-voltage controller IC for synchronous rectification in resonant converter applications. The IC can emulate the operation of the two secondary rectifier diodes by correctly driving the synchronous rectifier (SR) MOSFETs in the two secondary legs. The core of this device are two high-voltage, high speed comparators which sense the drain to source voltage of the MOSFETs differentially. The device current is sensed using the RDSON as a shunt resistance and the GATE pin of the MOSFET is driven accordingly. Dedicated internal logic then manages to turn the power device on and off in close proximity of the zero current transition. IR1168 further simplifies synchronous rectifier control by offering the following power management features: -Wide VCC operating range allows the IC to be directly powered from the converter output -Shoot through protection logic that prevents both the GATE outputs from the IC to be high at the same time -Device turn ON and OFF in close proximity of the zero current transition with low turn-on and turn-off propagation delays; eliminates reactive power flow between the output capacitors and power transformer -Internally clamped gate driver outputs that significantly reduce gate losses. The SmartRectifierTM control technique is based on sensing the voltage across the MOSFET and comparing it with two negative thresholds to determine the turn on and off transitions for the device. The rectifier current is sensed by the input comparators using the power MOSFET RDSON as a shunt resistance and its GATE is driven depending on the level of the sensed voltage vs. the 3 thresholds shown below.
VGate
VDS VTH2 VTH1 VTH3
Figure 1: Input comparator thresholds Turn-on phase When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating a negative VDS voltage across it. The body diode has generally a much higher voltage drop than the one caused by the MOSFET on resistance and therefore will trigger the turn-on threshold VTH2. When VTH2 is triggered, IR1168 will drive the gate of MOSFET on which will in turn cause the conduction voltage VDS to drop down to ID*RDSON. This drop is usually accompanied by some amount of ringing, that could trigger the input comparator to turn off; hence, a fixed Minimum On Time (MOT) blanking period is used that will maintain the power MOSFET on for a minimum amount of time. The fixed MOT limits the minimum conduction time of the secondary rectifiers and hence, the maximum switching frequency of the converter. Turn-off phase Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level where VDS will cross the turn-off threshold VTH1.
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IR1168S
Since the device currents are sinusoidal here, the device VDS will cross the VTH1 threshold with a relatively low dV/dt. Once the threshold is crossed, the current will start flowing again through the body diode, causing the VDS voltage to jump negative. Depending on the amount of residual current, VDS may once again trigger the turn-on threshold; hence, VTH2 is blanked for a time duration tBLANK after VTH1 is triggered. When the device VDS crosses the positive reset threshold VTH3, tBLANK is terminated and the IC is ready for next conduction cycle as shown below.
VTH3 IDS
VDS T1 VTH1 T2
VTH2
Gate Drive
Blanking MOT tBLANK time
Figure 2: Secondary currents and voltages
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IR1168S
VCC
VCC ON
VCC UVLO
t
UVLO NORMAL UVLO
Vcc UVLO
VTH1 VDS VTH2 t Don VGate 90% 50% 10% t rise tfall t Doff
Timing waveform
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IR1168S
Package Details: SOIC8N
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IR1168S
Tape and Reel Details: SOIC8N
LOADED TAPE FEED DIRECTION
B
A
H
D F C
NOTE : CONTROLLING DIM ENSION IN M M
E G
CARRIER TAPE DIMENSION FOR Metric Code Min Max A 7.90 8.10 B 3.90 4.10 C 11.70 12.30 D 5.45 5.55 E 6.30 6.50 F 5.10 5.30 G 1.50 n/a H 1.50 1.60
8SOICN Imperial Min Max 0.311 0.318 0.153 0.161 0.46 0.484 0.214 0.218 0.248 0.255 0.200 0.208 0.059 n/a 0.059 0.062
F
D C E B A
G
H
REEL DIMENSIONS FOR 8SOICN Metric Code Min Max A 329.60 330.25 B 20.95 21.45 C 12.80 13.20 D 1.95 2.45 E 98.00 102.00 F n/a 18.40 G 14.50 17.10 H 12.40 14.40
Imperial Min Max 12.976 13.001 0.824 0.844 0.503 0.519 0.767 0.096 3.858 4.015 n/a 0.724 0.570 0.673 0.488 0.566
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IR1168S
Part Marking Information
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IR1168S
Ordering Information
Standard Pack Base Part Number Package Type Form IR1168 SOIC8N Tube/Bulk Tape and Reel Quantity 95 2500 IR1168SPBF IR1168STRPBF Complete Part Number
The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are subject to change without notice. This document supersedes and replaces all information previously supplied.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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